Semiconductor memory

ABSTRACT

A SRAM memory is composed of FD-SOI transistors, and performance of the memory cell is improved by controlling an electric potential of a layer under a buried oxide film of a SOI transistor constituting a driver transistor. Performance of the SRAM circuit in the low power voltage state is improved. In the SRAM memory cell composed of the FD-SOI transistor, an electric potential of a well under a BOX layer is controlled to control a threshold voltage Vth, thereby increasing a current. Thus, the operations of the memory cell can be stabilized.

CLAIM OF PRIORITY

The present application claims priority from Japanese application JP2004-176669, filed on Jun. 15, 2004, the contents of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor integrated circuitformed with static memory (SRAM) circuits integrated on a semiconductorchip. More specifically, this invention relates to circuit configurationallowing for reduction of an operating voltage for a SRAM integratedcircuit device.

2. Description of the Related Art

FIG. 33 shows a conventional type of a SRAM memory cell circuit. SymbolsBL and BLB each indicates a bit line, WL a word line, Vdd a power line,and Vss a ground potential line. Further, reference numerals 111 and 112denote a transfer transistor for access to a memory cell, 113 and 114 adriver transistor for driving a memory node for maintaining therein datafor the memory cell, 115 and 116 a load transistor for supplying anelectric charge for maintaining data in the memory cell, and 117 and 118a storage node. Lowering a power voltage is the most simple and mosteffective method for reducing power consumption in a circuit. When apower voltage is low, however, a current in a transistor also drops,which disadvantageously causes such programs as lowering of an operatingspeed and degradation of operational stability.

Japanese Patent Laid-open No. 2000-114399 discloses the technique forraising a current, by connecting the back gates of a transfer transistorand a driver transistor in a SRAM memory cell and a gate, when thetransistors are ON respectively. Japanese Patent Laid-open No.2002-353340 discloses the technique for raising a current, by connectingthe back gates of six transistors each constituting a SRAM memory celland a gate, when the transistors are ON respectively. Further JapanesePatent Laid-open No. 11-16363 discloses the technique for raising acurrent in each of a driver transistor and a transfer transistor in aSRAM memory cell with a word line activated therein, by connecting backgates (or layers under a buried oxide film when an SOI (Silicon onInsulator) structure is used) of the transfer transistor and the drivertransistor for the memory cell to a word line.

Representative examples of the pass transistor logic circuit describedin Embodiment 12 are described in “PRINCIPLE OF CMOS VLSI DESIGN, ASystem Perspective” by Neil H. E. Weste and Kamran Eshraghin, SECONDEDITION, p. 304-307.

SUMMARY OF THE INVENTION

A power voltage for an LSI (Large Scale Integrated Circuit) has beenbecoming increasingly lower in association with the necessity forreduction of power consumption and size reduction of transistorstherein. For instance, in the 130 nm process, an LSI operating with thepower voltage of 1.2 V is manufactured. When a power voltage becomeslower, the operational stability during read/write operations in a SRAMcircuit becomes lower, which disables operations in the stable state.Further also a current in each transistor constituting a memory cellbecomes lower, and therefore also the operating speed becomes lower.When a driving force, namely a current for each transistor constitutinga memory cell changes, also such performances as stability duringread/write operations and operating speed change. Therefore, if it ispossible to properly control performance of each transistor constitutinga memory cell, the transistor's performance can be improved. The firstand second conventional examples disclose the techniques each forrealizing low voltage operations by connecting a back gate of anappropriate transistor in an SRA cell and a gate for controllingperformance of the transistor. Actually, when a voltage higher than thatloaded to a source node is applied to a back gate of an n-channel typebulk CMOS transistor, it is possible to control a threshold voltage(Vth) of the transistor to a low level.

However, when a voltage of about 0.5 V or more at room temperature or ofabout 0.2 V or more at high temperatures is loaded to a back gate of thebulk CMOS transistor, a large junction current flows at a PN junction ofthe transistor, which disadvantageously results in increase of powerconsumption. For the reason described above, in the first and secondconventional examples, increase of power consumption does not occur in acircuit operating with a power voltage of 0.2 V or below. In circuitsoperating at a voltage higher than the value described above, however,the power consumption increases due to the junction current, whichdisadvantageously makes it difficult to lower power consumption. Furtherthe third conventional example discloses the configuration in which athreshold voltage (Vth) is controlled by using a transistor having theSOI structure. In the SOI structure, by controlling a voltage in a lowerlayer of the buried oxide film, an unnecessary increase in current in atransistor is suppressed and Vth of the transistor can be controlled, sothat a power voltage for a SRAM can be lowered by suppressing anincrease in power consumption. With this configuration, however, Vth'sin the driver transistor and transfer transistor drop simultaneously inassociation with activation of a word line. Consequently, Vth in thedriver transistor connected to a storage node storing therein “H” databecomes lower, which disadvantageously spoils operational stability ofthe SRAM. Further capacities of back gates of the transfer transistorand the driver transistor are added to a capacity of the word line.Therefore, a parasitic capacity of the word line increases, whichdisadvantageously lowers the operating speed.

By forming a SRAM memory cell with SOI transistors and properlycontrolling an electric potential in a lower well layer of a buriedOxide (BOX) layer of each transistor to change a current flowing in eachtransistor, it becomes possible to improve various performances of theSRAM. Since the well layer is electrically insulated by the BOX layerfrom the SOI layer with transistors provided thereon, an increase insurplus leak current never occurs. When well contact is providedproperly, also the memory cell area does not increase. Further, whenpowers corresponding to two different voltages are selectively loaded toa specified node in a memory to change a current flowing therein,performance of each transistor can be improved. In addition, a load tothe word line does not increase, so that the operating speed is notlowered.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a general block diagram showing circuit configuration of aSRAM memory cell according to the present invention;

FIG. 2 is a general block diagram showing a cross section of atransistor structure used in the present invention;

FIG. 3 illustrates an equivalent circuit of a transistor used in thepresent invention;

FIG. 4 is a general block diagram showing a layout of the SRAM memorycell according to the present invention;

FIG. 5 is a cross-sectional view of the SRAM memory cell according tothe present invention;

FIGS. 6A through 6E are schematic diagrams showing steps in productionof a memory cell according to the present invention;

FIG. 7 is a general block diagram showing a layout of the SRAM memorycell according to the present invention;

FIG. 8 is a cross-sectional view showing the SRAM memory cell accordingto the present invention;

FIG. 9 is a general block diagram showing a layout of the SRAM memorycell according to the present invention;

FIG. 10A is a diagram showing a layout of a memory cell and FIG. 10Bshows a form of a diffusion layer after production thereof;

FIG. 11 is a general block diagram showing circuit configurations of theSRAM memory cell and a word driver according to the present invention;

FIG. 12 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 13 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 14 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 15 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 16 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 17 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 18 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 19 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 20 is a general block diagram showing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 21 is a general block diagram showing circuit configurations of theSRAM memory cell and word driver according to the present invention;

FIG. 22 is a general block diagram showing circuit configurations of theSRAM memory cell, word driver, and a source line control circuitaccording to the present invention;

FIG. 23 is a general block diagram sowing circuit configuration of theSRAM memory cell according to the present invention;

FIG. 24 is a general block diagram showing a layout of the SRAM memorycell according to the present invention;

FIG. 25 is a general block diagram showing a layout of the SRAM memorycell according to the present invention;

FIG. 26 is a cross-sectional view showing the SRAM memory cell accordingto the present invention;

FIG. 27 is a cross-sectional view showing the SRAM memory cell accordingto the present invention;

FIG. 28 is a general block diagram showing circuit configuration of aSRAM peripheral circuit according to the present invention;

FIG. 29 is a general block diagram showing circuit configuration of theSRAM peripheral circuit according to the present invention;

FIG. 30 is a general block diagram showing circuit configuration of theSRAM peripheral circuit according to the present invention;

FIG. 31 is a general block diagram showing circuit configuration of theSRAM peripheral circuit according to the present invention;

FIG. 32 is a general block diagram showing a system LSI with the SRAMaccording to the present invention packaged thereon;

FIG. 33 is a general block diagram showing circuit configuration of aSRAM memory circuit based on the conventional technology;

FIG. 34 is a general block diagram showing circuit configuration of aDRAM peripheral circuit according to the present invention;

FIG. 35 is a general block diagram showing a SRAM macro according to thepresent invention; and

FIG. 36 is a view showing a voltage of a power for the SRAM according tothe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

FIG. 1 is a circuit diagram showing a SRAM memory cell according to thepresent invention. In FIG. 1, symbols BL and BLB each indicate a bitline, WL indicates a word line, Vdd indicates a power line, and Vssindicates a ground potential line. Further reference numerals 1 and 2each indicate a transfer transistor for access to a memory cell, 3 and 4each indicate a driver transistor for driving a storage node formaintaining therein data for the memory cell, 5 and 6 each indicate aload transistor for supplying an electric charge for maintaining data inthe memory cell, and 7 and 8 each indicate a storage node for storingdata. For instance, Vdd is at an electric potential of 1.2 V, and theground potential line Vss is at an electric potential of 0 V. FIG. 2 isa general block diagram showing a cross section of a transistor used inthe circuit shown in FIG. 1. In FIG. 2, reference numeral 11 indicates agate, 12 a drain, 13 a source, 14 a well layer under a BOX layer, 15 asupport substrate, 16 a buried oxide film (BOX) layer, and 17 an elementseparating area. This transistor has a fully depleted SOI (FD-SOI)transistor structure. By controlling an electric potential in the welllayer, a threshold voltage (Vth) of the transistor can be controlled aswith controlling an electric potential in a back gate of a bulk CMOStransistor. Further the well layer is separated from a diffusion layersuch as a source and a drain of a transistor with the BOX layer as aninsulating film, so that a current does not flow between the well andthe diffusion layer even when an electronic potential in the well ischanged. FIG. 3 shows an equivalent circuit based on the transistorstructure shown in FIG. 2. In this figure, reference numeral 11designates a gate, 12 a drain, 13 a source, and 14 a well. The well isseparated from a semiconductor area functioning as a back gate in a bulkCMOS transistor according to the capacity. This well 14 is describedhereinafter as a back gate in the transistor shown in FIG. 3. In FIG. 1,a transistor having this structure is used.

Next a read operation is described below with reference to a case where“L” data is stored in a storage node 117 and “H” data is stored in astorage node 118 in the memory cell shown in FIG. 33. When the readoperation is performed, the bit lines BL and BLB are pre-charged to anelectric potential of “H”. When an electric potential in the word lineWL is set to “H” after pre-charging, transfer transistors 111 and 112are turned ON and the electric potential of the bit line BL, preset tobe of “H”, is discharged from the transistor 111 through the storagenode 117 and the driver transistor 113. Then, when the electricpotential of the bit line BL is raised to a level at which the electricpotential can be amplified by a sense amplifier, a sense amplifier, notshown, connected to the bit line is booted, whereby data stored in thememory cell is amplified and outputted. Focusing on the route throughwhich the electric charge of the bit line is discharged, an electricpotential in the storage node 117 is at the “L” level, namely 0 V untiljust before start of the read operation. When the read operation isstarted, however, a section between the bit line BL and the groundpotential line Vss is resistively divided by the transfer resister 111and driver transistor 113. As a result, the electric potential in thestorage node 117 is set to a positive electric potential such as 0.3 V.When the electric potential becomes higher, conductance of an nMOStransistor with a gate thereof connected to the storage node 117 becomeshigher, while conductance of a pMOS transistor with a gate thereofconnected to the storage node 117 becomes lower. Therefore the electricpotential of the storage node 118 having been set at the “H” levelbecomes lower. Further a rise in the electric potential in the storagenode 118 is fed back to the storage node 117, and with repetition ofthis operation, data stored in the memory cell is destroyed. Theordinary memory cell is designed so that a ratio of conductance of thedriver transistor to that of the transfer transistor will be as large as1.5 or more. Therefore the electric potential in the storage node 117never rise to a level at which data stored in the memory cell isdestroyed. However, in association with the recent tendency in which atransistor production process is divided to more and more minute steps,variations in performance among transistors has been becoming larger. Inaddition, sometimes memory cells each having a lower conductance ratioas compared to that in designing are produced, which in turn results inthe tendency of lower operational stability during a read operation.When a power voltage is dropped for power saving, a logical thresholdvoltage in an inverter formed with an nMOS transistor with the gateconnected to the storage node 117 and a pMOS transistor drops.Consequently, feedback destroying data is liable to occur, which alsolowers the operational stability during the read operation.

In the circuit according to the present invention shown in FIG. 1, whendata for “L” is stored in the storage node 7 and data for “H” in astorage node 8, the read operation is performed almost similarly to thatshown in FIG. 33. However, a back gate of the driver transistor 3 isconnected to a gate, so that the so-called forward bias is loaded to thedriver transistor 3, and Vth of the driver transistor 3 becomes lowerwith the conductance raised. When the work line is turned ON, therefore,a rise of an electric potential in the storage node 7 becomes furthersmaller. In addition, in this state, forward bias is loaded to the loadtransistor 6, but an electric potential of a back gate of the drivertransistor 4 is equal to a source voltage. Therefore, a logicalthreshold voltage in an inverter formed with the load transistor 6 anddriver transistor 4 is higher as compared to that when forward bias isnot loaded to the load transistor 6. Consequently, even when an electricpotential in the storage node 7 rises, a feedback destroying data seldomoccurs. As described above, the configuration in which back gates of aload transistor and a driver transistor are connected to a gate hasexcellent operational stability during the read operation, is resistantto variations of performances among transistors, and therefore issuitable to operations at a low voltage. Further in the presentinvention, when a gate and a back gate are connected to each other, evenif a voltage of, e.g., 1.2 V is loaded in the forward direction, acurrent does not flow from a well to the diffusion layer because of theinsulating film. Therefore, even a voltage of as high as 0.5 V or moreat which the PN junction is turned ON can be applied without causingincrease in power consumption.

FIG. 4 shows layout of the memory cell. In FIG. 4, reference numerals 1and 2 each designate the transfer transistor, 3 and 4 the drivertransistor, 5 and 6 the load transistor, 21 a contact, 22 a gate node,23 a diffusion zone. A range enclosed with a dotted line indicates amemory cell. With a contact positioned under a gate node between adriver transistor and a load transistor sharing a common gate, the gateand the back gate are connected to each other.

FIG. 5 is a general block diagram showing a cross section of the memorycell taken along line A-A in FIG. 4. In FIG. 5, reference numeral 21denotes the contact, 22 the gate node, 24 an insulating film, 25 a SOIlayer, 26 a buried oxide film, 27 a well layer, 28 a element separatinglayer, and 29 a support substrate. The SOI layer on which a channel isformed is separated by the buried oxide film from a well layer. Withthis configuration, even when forward bias is loaded to the well layerin the bulk CMOS transistor, a current does not flow from the well tothe source node. Further the gate and back gate are connected to eachother in the state where the gate and back gate are insulated andseparated from other nodes.

FIGS. 6A through 6E are diagrams showing outline of processes forproducing a memory cell having the cross section as shown in FIG. 5 stepby step. In FIGS. 6A through 6E, reference 25 denotes the SOI layer, 26the buried oxide film, 27 the well layer, 28 the element separatinglayer, 29 the support substrate, 30 an insulating film, and 31 a metalcontact. FIG. 6A shows the state after the element separating layer isformed. When an oxide film made of such a material as SiO₂ is formed ona surface thereof, the state shown in FIG. 6B is provided. In thisstate, when a contact hole is formed by etching or the like, the stateas shown in FIG. 6C is provided. When a metallic material as a contactmaterial such as tungsten is deposited on the contact hole, the stateshown in FIG. 6D is provided. Further, when a gate node is formed on thecontact hole in the state shown in FIG. 6D, the state shown in FIG. 6Eis provided in which the back gate and the gate node are connected toeach other.

Assuming that “H” data is stored in the storage node 117 and “L” data inthe storage node 118 in the memory cell shown in FIG. 33, a descriptionis made of an operation for writing “L” data in the storage node 117 and“H” data in the storage node 118. In this operation, the bit line BL isset to the “L” level and bit line BLB to the “H” level, and also theword line is set to the “H” level, thereby turning ON the transfertransistor. An electric charge in the storage node 117 is dischargedfrom the transfer transistor 111, and an electric potential in thestorage node 117 drops from the “H” level. When the electric potentialof the storage node 117 drops to a level lower than a logical thresholdvoltage in an inverter formed of the load transistor 116 and the drivertransistor 114, an electric potential in the storage node 118 havingbeen at the “L” level rises, an also, a feedback between the storagenodes is effected. Thus, new data is written in the memory cell. Asdescribed above, in the SRAM memory cell, data write is performed bydischarging an electric charge in a storage node at the “H” level with atransfer transistor. However, since an electric charge is supplied froma load transistor simultaneously when the electric charge is dischargedby the transfer transistor, it is necessary for the transfer transistorto draw out an electric charge more than that fed from the loadtransistor. Because of this necessity, when conductance of the loadtransistor becomes larger, the time required for writing data becomeslarger. In addition, when the conductance is larger than a design valuedue to variations in performance of transistors or the like, sometimesthe operation for data write may be disabled. To overcome this problem,it is necessary to make smaller conductance of the load transistor or tomake larger conductance of the transfer transistor.

In this embodiment, since the back gate of the load transistor isconnected to the gate to increase the conductance, the time required fordata write is longer as compared to that in a memory cell based on theconventional technology. In general, when data is read out, data isamplified by booting an sense amplifier after the memory cell is driven,and the data is outputted. However, the operation for writing data isterminated at a point of time when data in the memory cell changes, sothat the data write operation may be performed within a longer period oftime. Therefore a problem seldom occurs relating to prolonging the datawrite time. In a case where a problem arises in that the data write timeis delayed, the data write time can be shortened by employing theconfiguration of a memory cell as shown in FIG. 14. With thisconfiguration, since a back gate of the driver transistor is connectedto the gate as with the case shown in FIG. 1, the stability during aread operation is improved. At the same time, the back gate of the loadtransistor is connected to the source node, so that conductance of theload transistor is smaller as compared to that in the circuit shown inFIG. 1, and also the data write operation is performed at a higherspeed.

Embodiment 2

FIG. 7 shows layout of a SRAM memory cell according to the presentinvention. In descriptions of the following embodiments, the samereference numerals are used for the same components as those inEmbodiment 1, and a description is made only of different components.The circuit configuration of this memory cell at the transistor level isthe same as that shown in FIG. 1. The layout of the memory cell shown inFIG. 7 is different from that shown in FIG. 4 only in that a back gatecontact for the driver transistor as well as for the load transistor isformed below a contact for connecting the gate node to the metal layer.With this configuration, the contact formed between a driver transistorand a load transistor in the conventional technology is not necessary,so that an area of the memory cell can be reduced. In particular, when amemory cell is formed of a bulk CMOS transistor, it is necessary toseparate a well for a driver transistor from that for a load transistor,so that a certain distance is required for well separation between thetransistors. With the structure according to the present invention,however, the well separation is not required, so that the distancerequired in the conventional technology may be eliminated. Consequently,the memory cell area may be reduced as compared to that in a case wherethe bulk CMOS transistor is used.

FIG. 8 shows an outline of a cross section of the memory cell takenalong line A-A in FIG. 7. A well layer shared by the driver transistorand load transistor is connected to a gate through the back gate contactformed under a contact connecting the gate to the upper layer. Thisstructure can be produced through the same steps as those in FIG. 6.

Embodiment 3

FIG. 9 shows layout of a SRAM memory cell according to the presentinvention. A circuit diagram of the memory cell shown in FIG. 9 at thetransistor level is the same as that shown in FIG. 1. The memory cellshown in FIG. 9 is different from that shown in FIG. 1 only in that agate width (W-size) of the driver transistor is the same as that of thetransfer transistor. In the SRAM memory cell, as described in Embodiment1, it is generally necessary, for the purpose of preventing an electricpotential of a storage node at the “L” level from rising, thatconductance of the driver transistor is larger than that of the transfertransistor. In a memory cell using a bulk CMOS transistor, theconductance is generally adjusted by controlling the W-size. The W-sizeof the driver transistor is set to a value about 1.5 times larger ascompared to that of the transfer transistor. In this embodiment, theconductance when a back gate of the driver transistor is connected tothe gate and the driver transistor is ON is larger than that of thetransfer transistor. Consequently, it is not necessary to adjustconductance according to the W-size, and the W-size of the drivertransistor may be equalized with that of the transfer transistor. Thegreatest advantage provided by the equality of the W-size of the drivertransistor with that of the transfer transistor is that irregularitieson the rectangular surface of diffusion layers, namely, the edge facesof the diffusion layers of the driver transistor and transfer transistoreach having a rectangular face are eliminated. That is, the edge face ofthe diffusion layer can be formed linear. In the layout based on theconventional technology, the diffusion layer has irregularities eachbending with perpendicularity. The diffusion layer and the gate node inthe layout described above is shown in FIG. 10A. In this figure,reference numeral 32 denotes a transfer transistor, and 33 a drivertransistor. A form of the diffusion layer when an LSI having the layoutas described above is actually produced is shown in FIG. 10B. Also thegate node is shown for reference in the figure. When the transistor isactually produced, the gate node has a roundish form, but the form isshown as a rectangular one in this figure for simplification. In thediffusion layer actually produced, irregularities are present on an edgeface of the diffusion layer. However, unlike the state shown in thelayout diagram, the edge of the diffusion layer does not bendperpendicularly, and has a roundish form. When a form of the diffusionlayer is as shown in the figure, the gate node may slightly move in thevertical direction, for instance, due to displacement of a mask duringthe production process. Alternatively, a form of an edge of thediffusion layer may change even a little. In these cases, the gate widthchanges from the design value, which will cause degradation ofperformance of the SRAM memory cell. In the layout shown in thisembodiment, an edge of a diffusion layer has a completely linear form,so that irregularities seldom occur on the diffusion layer edge. Inaddition, even when the gate node moves in the vertical direction alittle, the design value for the gate width can be maintained. Becauseof this feature, the memory cell in this embodiment is relatively littleaffected by variations of produced transistors, and degradation ofperformance of the memory cell seldom occurs. Further in the priorart-based memory cell using a balk CMOS transistor, it is necessary toprovide a certain W-size ratio between the driver transistor andtransfer transistor. Therefore, even if a transfer transistor isproduced with the minimum W-size allowable in actual production, aW-size of the driver transistor is required to be larger than that ofthe transfer transistor. In this embodiment, both the driver transistorand transfer transistor can be produced with the minimum W-sizesallowable in actual production respectively. As a result, it is possibleto produce a memory cell having a smaller area than that of other memorycells based on the prior art.

Embodiment 4

FIG. 11 is a circuit diagram showing a SRAM memory cell according to thepresent invention. Symbol Vddh indicates a power voltage higher thanthat indicated by symbol Vddl. Now suppose that the power voltage Vddhis 1.2 V when the power voltage Vddl is 1.0 V. The circuit configurationin this embodiment is the same as that in Embodiment 1, but an electricpotential at the “H” level of the word line is higher than that at the“H” level of the bit line and also that in a source line of a loadtransistor in the memory cell. When an electric potential at the “H”level of the word line becomes higher, conductance of the transfertransistor becomes larger with a memory cell current raised, and anoperating speed of the memory cell becomes faster. In the priorart-based memory cell, when conductance of the transfer transistorbecomes larger, the operational stability during a data read operationdisadvantageously drops. In the memory cell according to the presentinvention, a back gate of the driver transistor is connected to a gate,and conductance when the driver transistor is ON is large. Consequently,it is possible to prevent operational stability during the readoperation from being negatively affected due to influence by theconductance of the transfer transistor increasing when the word linevoltage is high. In addition, the operational stability during the readoperation can therefore be highly maintained. Further, becauseconductance of the transfer transistor is larger, the operating speedduring a write operation becomes faster. Because of the features asdescribed above, the memory cell according to the present invention canoperate at a high speed without losing the operational stability.Further in the SRAM circuit, power is consumed more in a circuit fortransferring data from the bit line and memory cell to an input/outputcircuit lying outside the memory circuit. Specifically, a percentage ofthe power consumed in the word line and power line in the memory cell (asource line for a load transistor) is about 1% of the power consumed inthe entire SRAM circuit. Accordingly, even when a high voltage is loadedto the word line to increase power consumption in the word line, thepower consumption in the entire SRAM is little affected.

In this embodiment, a high voltage is loaded to the word line, butactually the high voltage is loaded only to a word driver 41 for drivingthe work line. The word driver is described as an inverter circuitformed with one n-channel type transistor and one p-channel typetransistor in this embodiment. Actually there is a case where theinverter circuit is formed with a NAND circuit or a NOR circuit, andeffects provided by the present invention do not change even when acircuit for the word driver is modified. Further the back gate of theinverter circuit is connected to the gate in this embodiment, but thisconfiguration may be changed according to the performance desired in thedesigning step. In addition, a configuration is conceivable in which aback gate of the inverter circuit is directly connected to a powersource, but the effects of the present invention does not change.

Various methods may be conceivable as a method of generating a highvoltage Vddh such as increasing a voltage from the voltage Vddl with acharge pump, generating the voltage Vddh by lowering a high powervoltage used in an input/output circuit, supplying two types of powers,namely a high voltage power and a low voltage power from outside of theLSI. The present invention can provide high performance of a memory cellregardless of a method employed for generating the voltage Vddh.

Further a write operation can be performed at a substantially high speedin this embodiment. When read and write operations at a higher speed arerequired, although not specifically illustrated, the configuration isemployed in which an electric potential at the “H” level of the wordline WL is made higher than the voltage Vdd in a circuit shown in FIG.14. In this case, conductance in the load transistor does not becomehigh, so that stability during a read operation can be improved withoutdisabling read and write operations at a high speed.

Embodiment 5

FIG. 12 is a circuit diagram showing a SRAM memory cell according to thepresent invention. The voltage Vddh is a power voltage higher than thevoltage Vddl. The circuit configuration in this embodiment is the sameas that in Embodiment 1. However, the electric potential at the “H”level of the word line and the electric potential in a source line forthe load transistor in the memory cell are higher than the electricpotential at the “H” level of the bit line. This embodiment is differentfrom Embodiment 4 shown in FIG. 11 in that a power voltage for aninverter for storing data is high. Because of this feature, conductanceof the driver transistor and load transistor is increased, therebyincreasing the operational stability during a read operation. Thus, theoperational stability and high-speed operation is achieved in thisembodiment.

Further, because conductance of the load transistor becomes larger, whenthe time for data write is to be shortened, the write time for datawrite can be shortened by employing the circuit configuration shown inFIG. 15. In the circuit shown in FIG. 15, since a back gate of the loadtransistor is connected to a source node, forward bias is not loadedthereto not to increase the conductance, and therefore the write speedis improved.

FIG. 36 shows changes in an electric potential when an electricpotential for the voltage Vdd is changed according to the state of theSRAM memory cell. In the ACT state in which the memory is accessed andactivated, a voltage Vddh is higher than a voltage Vddl. In contrast, inthe STBY state in which the memory cell is in the so-called stand-bystate, the voltage Vddh is equal to the voltage Vddl. In the field oflow power consumption LSI in which a leak current should be reduced, thefine process technology for transistors has been advanced, and in theproduction processes allowing for production of memory cells with thesize of 90 nm or below, in addition to a sub-threshold current havingbeen regarded as troublesome as a leak current, a gate leak currentflowing through the gate oxide film is also regarded as troublesome anddisadvantageous. The gate leak current drops to about 10% when a voltageloaded thereto drops by about 0.1 V. To reduce a leak current,therefore, it is important to lower a power voltage as much as possibleas unnecessary. In a circuit not specifically requiring low powerconsumption, control over the voltage Vddh is not always necessary.

Embodiment 6

FIG. 13 shows a circuit diagram of a SRAM memory cell according to thepresent invention. A voltage Vddh is a power voltage higher than avoltage Vddl. The circuit configuration in this embodiment is the sameas that employed in Embodiment 1, but an electric potential in a sourceline for a load transistor in the memory cell is higher than that at the“H” level in the bit lime as well as in the word line. As compared toEmbodiment 5 shown in FIG. 12, an electric potential at the “H” level inthe word line is lower. Generally in the SRAM circuit, a percentage ofpower consumed in the word line to all of the consumed power in thecircuit is small. However, in the SRAM circuit in which a large numberof word lines are activated simultaneously and a small number of bitlines are activated simultaneously, the percentage of power consumed bythe word lines may be large with respect to the entire powerconsumption. In this embodiment, an electric potential at the “H” levelof the word line is low, so that the power consumption can be suppressedto a low level. Further, since a back gate of the transistorconstituting an inverter for storing data in the memory cell isconnected to the gate and a high voltage is loaded to a power source forthe inverter for storing the data, the operational stability during aread operation is very high in this memory cell. When the write speed islow, the write speed can be made faster by connecting a back gate of theload transistor to the source node. The voltage Vddh in this embodimentcan be controlled as with that in Embodiment 5.

Embodiment 7

FIG. 16 is a circuit diagram showing a SRAM memory cell according to thepresent invention. In the memory cell shown in FIG. 16, all of backgates of six transistors each constituting the memory cell are connectedto the gate nodes of the transistors respectively. Because of thisconfiguration, the operating speed becomes faster and the operationalstability is high. The circuit shown in FIG. 16 is different from thecircuit in Embodiment 1 shown in FIG. 1 in that a back gate of thetransfer transistor is connected to the gate node. A load to the wordline in this embodiment is larger as compared to that in the circuitshown in FIG. 1. Because of this feature, when the same word driver isused, rise of the word line is slower. To quicken rise of the word line,it is necessary to use a word driver with the large size. In this case,however, because a memory cell current as a current for driving the bitline becomes large, the time required for driving the bit line isshortened. Therefore, in operations of the memory cell, when the timerequired for driving the bit line is longer than that required fordriving the word line, the configuration in this embodiment allowsoperations at a higher speed.

Also in the circuit configuration in this embodiment, as described inEmbodiments 1 to 6, a configuration of the memory cell is conceivable inwhich an electric potential at the “H” level of the word line Wl andthat of the source line in the load transistor are higher than that atthe “H” level of the bit line. Also in the cases described above, thereare provided such advantages as an operation at a higher speed andoperational stability of the memory cell. Further to enable a writeoperation at a higher speed, also a configuration is allowable in whicha back gate of the load transistor is connected to the source node.

FIG. 17 shows a representative configuration in which two types of powervoltages and a back gate of the load transistor are connected to thesource node. In this configuration, because of the effect provided byapplication of a high voltage and bias of the back gate connected to thegate, conductance of the driver transistor is increased, so that theoperational stability during a read operation is high and the operatingspeed is high. Further because of the bias effect provided by the backgate connected to the gate, also conductance of the transfer transistoris increased, which enables a high-speed operation. In addition, alsosince the back gate is connected to the source node, the conductance ofthe load transistor is prevented from rising excessively, whereby awrite operation is performed at a higher-speed.

FIG. 18 shows a circuit employing the configuration in which an electricpotential at the “H” level of the word line is changed to a voltagehigher than that shown in FIG. 17. Because conductance of the drivertransistor is sufficiently high owing to the effect provided by a highvoltage and connection of the back gate to the gate, the operationalstability during a read operation is preserved even when conductance ofthe transfer transistor is made higher. Further since conductance of thetransfer transistor is high, also the operating speed is high.

Embodiment 7

FIG. 19 is a circuit diagram showing a SRAM memory cell according to thepresent invention. The circuit of the memory cell shown in FIG. 19 isdifferent from that in Embodiment 1 shown in FIG. 1 in that a back gateof the transfer transistor is connected to the source node. With thisconfiguration, the voltage Vth of the transfer transistor connected tothe storage node in which the “H” data is stored becomes low. Therefore,a speed of a write operation is increased in which an electric potentialat the “H” level is lowered to “L”. Further since the voltage Vth of thetransfer transistor connected to the storage node in which the “H” datais stored is low, also a read operation can be performed by prechargingto a voltage which is equal to about a half (½) of the power voltage aswith a case where a DRAM is used. A read operation is performed byprecharging a bit line with a power voltage in the ordinary SRAMcircuit. In a read operation in the SRAM memory cell, an electricpotential of the bit line precharged to the “H” level through a storagenode for “L” data in a selected memory cell drops, and a difference froman electric potential on the contrary side drops to a design value. Atthis time, the sense amplifier is started to amplify the difference inelectric potentials. The electric potential to be at the “H” level maydrop through the storage node for storing therein “L” data in the memorycell due to a leak current from a transfer transistor in a memory cellnot selected. In this case, long time is required until a difference inelectric potentials is generated between bit lines. This may slow downthe read speed, and in the worst case the read operation may bedisabled. This phenomenon is called bit line offset. This is a problemthat occurs when a voltage Vth of the transfer transistor not selectedbecomes lower. In the circuit in this embodiment, the voltage Vth dropsonly in the transfer transistor in which “H” data is stored therein, andtherefore there is no leak current to the node for storing “L” data, andthe problem of bit line offset does not occur.

Also in the circuit configuration in this embodiment, as described inEmbodiments 1 to 6, configuration of the memory cell is conceivable inwhich an electric potential at the “H” level of the word line WL andthat of the source line for the load transistor are higher than that atthe “H” level of the bit line. Also in this case, such advantages ashigh-speed operations and operational stability of the memory cell areprovided. Further to realize a high-speed operation during a writeoperation, also the configuration is allowable in which a back gate ofthe load transistor is connected to a source node.

In particular, in the configuration shown in FIG. 20, an electricpotential at the “H” level of the word line WL is high, so thatconductance of the transfer transistor becomes larger. Therefore notonly the time required for writing, but also the time required forreading can be shortened, whereby the operation speed of the entiresystem can be improved.

Embodiment 8

FIG. 21 is a circuit diagram for a SRAM memory cell according to thepresent invention. In the figure, reference numeral 41 denote a worddriver, which outputs a ground potential line Vssl lower than anelectric potential in the ground potential line Vss as an “L” electricpotential for the word line WL. With this circuit configuration, thetransfer transistor is always in the back-biased state, and theoperating speed is high. However, since the transfer transistor isalways in the back-biased state, a leak current from the transfertransistor is large. This poses a problem of bit line offset describedin Embodiment 7, which prevents a smooth read operation. To preventoccurrence of this problem, by setting an electric potential at the “L”level of the word line to an electric potential lower than that in theVss, a voltage difference between a gate and a source in the transfertransistor is negative, so that a leak current from the word line notselected is reduced.

In the configuration in this embodiment, an electric potential of aninactivated word line is lower than that in the Vss. Because of the highvoltage Vth of the transfer transistor, the problem of bit line offsetmay not occur even if the voltage Vth is lowered by means of forwardbias. In this case, it is not necessary to set an electric potential ofthe inactivated word line to a value lower than that in the Vss. Thismakes it possible to perform smooth operations with an electricpotential equal to that in the Vss without causing any problem.

Embodiment 9

FIG. 22 is a circuit diagram in the SRAM memory cell according to thepresent invention. In FIG. 22, symbol SL indicates a source line of adriver transistor in the memory cell, and all lines sharing a commonword line in the memory cell are connected to the source line. Symbol MCindicates an SRAM memory cell, and reference numeral 42 indicates anelectric potential control circuit. Also in this embodiment, thetransfer transistor in the memory cell is in the forward-biased state,and the conductance is large and the operating speed is high. When theword line is activated, a transistor functioning as a switch in theelectric potential control circuit 42 is turned ON with an electricpotential in the source line SL equalized to that in the groundpotential line Vss, so that the memory cell operates normally. When theword line is inactivated, the switch in the electric potential controlcircuit 42 is turned OFF, so that the electric potential in the SL risesfrom that in the Vss. In this step, the electric voltage in the Sl dropsto such a low level, e.g., 0.3 V that the data stored in the memory cellis not destroyed. When an electric potential in the SL becomes high, anelectric potential in the storage node storing therein “L” data in thememory cell rises. Therefore, a source electric potential in thetransfer transistor connected to the storage node storing therein “L”data rises, a voltage between the gate and source in the transfertransistor is changed to a negative one, and also a voltage between theback gate and source becomes smaller. Thus, a leak current from thetransfer transistor decreases. Therefore, a leak current from thetransfer transistor in the inactivate state decreases. This eliminatesthe problem of bit line offset occurring when forward bias is loaded tothe transfer transistor. Further, in FIG. 22, the electric potentialcontrol circuit 42 is formed with a n-channel type transistorfunctioning as a power switch and a resistor. In this circuit, also theconfiguration in which a diode is used in place of a resistor isconceivable because an electric potential of the SL not selected isrequired only to be set to such a level higher than that in the Vss thatdata stored in the memory cell is not destroyed. Also the configurationis allowable in which a resistor and a diode are connected to each otherin parallel or in series and are provided between the SL and the Vss.Further also the configuration is allowable in which a resistor and adiode are not used and a transistor is used as a resistor or a diode toform a circuit for controlling an electric potential in the SL. Asdescribed above, various configurations are conceivable for the electricpotential control circuit 42, but the same effect can be obtainedinsofar as an electric potential in the SL is set to a level higher thanthat in the Vss. Therefore the configurations are not illustrated hereinspecifically.

Embodiment 10

FIG. 23 shows a SRAM memory cell circuit according to the presentinvention. In this embodiment, one memory cell is formed of fourtransistors. In FIG. 23, reference numerals 51 and 52 denotes a transfertransistor having a function to access a storage node from a bit lineand also a function to charge the storage node to the “H” level, 53 and54 a driver transistor for driving a storage node at the “L” level, and55 and 56 a storage node for storing therein data. Symbol WL indicates aword line, BL and BLB each a bit line, and Vss a power line for “L”. Adescription is made of data storage operations in a case where “H” datais stored in a storage node 55 and “L” data is stored in a storage node56 in this circuit. During the operations for data storage, all of theword line WL, and bit lines BL and BLB are driven to the “H” level. Inthe transfer transistor 51, the back gate is set to “L” level, so thatthe transfer transistor 51 is in the forward-biased state with thethreshold voltage Vth dropped. Because of this, a leak current flowsfrom the bit line BL through the transfer transistor 51 to the storagenode 55, and the electric potential at the “H” level in the storage nodeis maintained. An electric potential of the back gate of the drivertransistor 53 is equal to that of the source node, so that the Vth doesnot change. In addition, a leak current flows only a little, andtherefore the “H” level of the storage node 55 is maintained. In thedriver transistor 54, an electric potential of the back gate is set tothe “H” level, that is, a state of forward bias loaded thereto isestablished, so that the Vth drops, and therefore the “L” level of thestorage node 56 can be maintained stably. A back gate of the transfertransistor 52 is set to the “H” level, so that a leak current flows onlya little, and therefore the “L” level of the storage node 56 is affectedlittle by the leak current. As described above, this memory celloperates stably, and an unnecessary leak current flows only a little inthis memory cell. Layout of this memory cell is shown in FIG. 24.

In FIG. 24, reference numeral 21 denotes a contact, 22 a gate node, 23 adiffusion layer, 51 and 52 a transfer transistor, and 53 and 54 a drivertransistor. A dot line indicates one memory cell. FIG. 25 shows memorycell layout, and a gate node, a contact, and a well layer are shown inthe figure. Reference numeral 57 is the well layer. Wells for thetransfer transistor 51 and driver transistor 53 and those for thetransfer transistor 52 and driver transistor 54 are formed in theintegrated state respectively and are connected to the storage node.FIG. 26 shows an outline of a cross section of the memory cell takenalong line A-A in FIG. 25. This figure also clearly shows that wells forthe transfer transistor 52 and driver transistor 54 are in theintegrated state. FIG. 27 shows an outline of a cross section of thememory cell taken along line B-B in FIG. 25. The well contact is formedunder the gate contact, and with this configuration, an increase inmemory cell area caused by providing the well contact is suppressed. Thewell layer extends in the lateral direction from the diffusion layer toa point under the gate node of the driver transistor for storing inversedata. As described above, the memory cell in this example has only fourtransistors, so that the area is reduced to two thirds of the SRAMmemory cell using six transistors, and therefore the area efficiency isexcellent.

Embodiment 11

FIG. 34 shows a DRAM memory cell according to the present invention.Symbol RWL indicates a word line for reading data, RBL a bit line forreading data, WWL a word line for writing data, and WBL a bit line forwriting data. Reference numeral 121 denotes a read access transistorused for reading data, 122 a write access transistor used for writingdata, and 123 a driver transistor for storing data. A back gate of thedriver transistor has a capacity, so that a capacity for data storage isnot required to be prepared specifically, which enables reduction of amemory cell area. Further a gate of the access transistor is connectedto the back gate, so that the threshold voltage Vth of the transistordrops only when the transistor is ON. Therefore the stored data ishardly destroyed, which enables realization of a memory cell allowing ahigh access speed.

Embodiment 12

FIG. 28 is a circuit diagram showing components of a circuit accordingto the present invention. The circuit shown in FIG. 28 is an invertercircuit, in which a gate and a back gate of the transistor constitutingthe circuit are connected to each other. This allows the inverter tooperate at a high-speed and a leak current flows only a littletherefrom. FIG. 29 is a circuit diagram showing components of thecircuit according to the present invention. FIG. 29 shows a NANDcircuit, in which a gate and a back gate of the transistor constitutingthe circuit are connected to each other. This allows the NAND gate tooperate at a high-speed and a leak current flows only a littletherefrom. Further n-types of transistors are stacked on each other intwo stages. If this circuit is formed with a bulk CMOS transistor, anelectric potential of a source node of the n-channel type transistorconnected to the output terminal is higher than that in the groundpotential line Vss. Consequently, the back gate bias is loaded theretoand a current is reduced with the operating speed degraded. In thisembodiment, the back gate and the gate are connected, so that thetransistor in the ON state is forward biased. Therefore the current doesnot drop, which enables high-speed operations. In this embodiment, theNAND circuit has two input terminals, but the same effect can beachieved also in the NAND circuit having three or more input terminals.FIG. 30 is a circuit diagram showing components of the circuit accordingto the present invention. FIG. 30 shows an NOR circuit, in which a gateand a back gate of a transistor constituting the circuit is connected toeach other. This allows the NOR circuit to operate at a high-speed and aleak current flows a little therefrom. Further p-channel typetransistors are stacked on each other in two stages. Therefore, if thiscircuit is formed with a bulk CMOS transistor, an electric potential ina source node of the p-channel type transistor connected to the outputterminal is lower than that in the power line Vdd with back gate biasloaded thereto. Thus, the current drops and the operating speed isdegraded. In this embodiment, since the back gate is connected to thegate, the transistor in the ON state is forward-biased. Therefore, ahigh-speed operation is possible without any current drop. In thisembodiment, the NOR circuit has two input circuits, but also the sameeffect can be achieved also in an NOR circuit having three or more inputterminals. FIG. 31 is a circuit diagram showing components of thecircuit according to the present invention. In this embodiment, anelectric potential of the node (out) pre-charged to the “H” level with asignal Pre is discharged by turning ON any of input terminals in1, in2,and in3, thus a signal being delivered. Since the back gate and gate ofthe n-channel type transistor to be discharged are connected to eachother, the circuit operates at a high-speed. A transistor not havingbeen turned ON is not forward-biased, so that a leak current flowslittle, and a voltage at the output terminal (out) does notunnecessarily drop, which provides a circuit in which a malfunctionseldom occurs.

In this circuit, one n-channel type transistor is provided between thenode (out) and the ground potential line Vss. However, the configurationis allowable in which two or more n-channel type transistors areprovided between the node out and the ground potential line Vss. In thiscase, as with the NAND circuit described above, the operating speed doesnot drop due to back gate bias in the bulk CMOS transistor, whichensures a high-speed operation. Similarly, when the transistors areconnected in series to each other, there occurs no effect by the backgate bias. Therefore, also in the pass transistor logic circuit, byusing a transistor in which the gate node and the back gate node areconnected to each other as with the circuit configuration as shown inFIG. 28 to FIG. 30, a high-speed operation is enabled.

Embodiment 13

FIG. 32 shows an outline of an LSI according to the present invention.At present, a system LSI having a CPU and a large capacity work memorywith circuits for other functions packaged therein has been developedand produced. In FIG. 32, symbol CPU indicates a central processing unit(CPU) functioning as a core for a processor, CACHE a cache memory usedin the CPU, RAM a large capacity work memory, and PERI a circuit havinga specific function other than the CPU core. The cache memory isrequired to operate at the same speed as that of the CPU core, so thatthe capability of operating at a high-speed is required for the cachememory. Further a work memory is required to have a large storagecapacity, so that an area of a work memory is required to be small. Forthe reasons described above, the cache memory CACHE is formed with the6-transistor type of memory cell having a high operating speed asdescribed in Embodiments 1 to 9 and the work random access memory RAMwith the 4-transistor type of memory cell having a small area asdescribed in Embodiment 10. This can provide a system SLI having theexcellent overall performance.

Embodiment 14

FIG. 35 shows a general configuration of a low-power consumption SRAMcircuit according to the present invention. Although all of thetransistors used in the circuit in this embodiment each have thestructure as shown in FIG. 2, but to simplify the circuit diagram, onlyFIG. 35 shows transistors each having a back gate with no capacity inplace of the equivalent circuits shown in FIG. 3. In FIG. 35, symbolsbank0 to bank3 each indicates a bank formed with memories accessedsimultaneously, symbols Vss_mem, Vdd_wd, Vss_amp, and Vss_peri eachindicate a power source with controlled voltage for reducing a leakcurrent, PLVC1 to PLVC4 indicate circuits for controlling electricpotentials in the power sources respectively, and sw1 to sw4 indicatesignals for power sources PLVC1 to PLVC4. Symbol MC indicates a memorycell, WA an amplifier, SA a sense amplifier, DEC a peripheral circuitother than the amplifier in the memory, and PLC a circuit forcontrolling each circuit. In FIG. 35, the write amplifier WA isconnected to each bit line, although cut off on the way to simplify thediagram. In this embodiment, the transistors in each bank are activatedonly when the power source of each bank is accessed, so that a leakcurrent is reduced when the bank is not accessed. In particular, byusing the memory cell described in each of Embodiments 1 to 10 as a SRAMmemory cell for this circuit, a SRAM circuit is provided which hasvarious excellent performances such as high speed operation, low leakcurrent, and operational stability of the memory. In particular, if theVddh control described in each of Embodiment 3 and on is employed alsofor power control in each bank, it is possible to build a high-speedSRAM circuit leaking a current less.

With the present invention, it is possible to provide a SRAM circuitcapable of operating at a high speed under a low voltage and consuming apower less as compared to that in the conventional technology.Incidentally, symbols and reference numerals used in the figures forthis patent application are as described below.

1,2,32,51,52,111,112 . . . Transfer transistor, 3,4,33,53,54,113,114 . .. Driver transistor, 5,6,115,116 . . . Load transistor,7,8,55,56,117,118 . . . Date storage node in memory cell, WL . . . Wordline, BL, BLB . . . Bit line, Vdd . . . Power line, Vss . . . Groundpotential line, 11, 12 . . . Gate node, 12 . . . Drain node, 13 . . .Source node 14, 27 . . . Well, 15, 29 . . . Support substrate, 16, 26 .. . Buried oxide film, 17, 28 . . . Element separating layer, 21, 31 . .. Contact, 23 . . . Diffusion layer, 24,30 . . . Insulating film, 25 . .. SOI layer, Vddh . . . Power line with an electric potential higherthan Vddl, Vddl . . . Power line with an electric potential lower thanVddh, 41 . . . Word driver, 42 . . . SL electric potential controlcircuit, SL . . . Source line for driver transistor in memory cell, MC .. . Memory cell, 57 . . . Well layer in layout diagram, in, in1, in2,in3. . . Input terminal of logic circuit, out . . . Output terminal oflogic circuit, Pre . . . Pre-charge signal, SOC . . . Chip of systemLSI, CPU . . . CPU core, CACHE . . . Cache memory, RAM . . . Workmemory, PERI . . . Logic circuit outside CPU core in system LSI, RWL . .. Word line for reading data, RBL . . . Bit line for reading data, WWL .. . Word line for writing data, WBL . . . Bit line for writing data, 121. . . Read access transistor, 122 . . . Write access transistor, 123 . .. Data memory driver transistor, bak0 to bank3 . . . Memory bank,Vss_msm, Vss_wd, Vss_amp, Vss_peri . . . Power source with the voltagecontrolled, PLVC1 to PLVC4 . . . Power electric potential controlcircuit, sw1 to sw4 . . . Electric potential control signal, WA . . .Write amplifier, SA . . . Sense amplifier, DEC . . . Memory peripheralcircuit other than amplifier, PLC . . . Power control signal generatingcircuit, MS1, MD1, MR1 . . . Components of power electric potentialcontrol circuit, ACT . . . Memory cell access time, STBY . . . Memorycell non-accessed time.

While a preferred embodiment of the present invention has been describedusing specific terms, such description is for illustrative purpose only,and it is to be understood that changes and variations may be madewithout departing from the spirit or scope of the following claims.

1. A semiconductor memory including a static type memory cellcomprising: a plurality of transistors each having an FD-SOI structurein which a SOI layer is completely depleted; first and second storagenodes for storing therein data; and a driver transistor using thetransistors; wherein said driver transistor comprises a semiconductorlayer including a well layer formed in a semiconductor substrate and aburied oxide film layer provided in contact with said well layer; asource node of said driver transistor is connected to a ground potentialline; and a gate node of said driver transistor is connected to saidwell layer.
 2. The semiconductor memory according to claim 1, whereinsaid well layer penetrates said semiconductor layer including saidburied oxide film and is connected to a gate node via a contact providedunder said gate node.
 3. The semiconductor memory according to claim 2,wherein the contact connected to said well layer is disposed at aposition connects said gate node to metallic wiring provided via aninter-layer film on said gate node.
 4. A semiconductor memory includinga static type memory cell comprising: a plurality of transistors eachhaving an FD-SOI structure in which a SOI layer is completely depleted;first and second storage nodes for storing therein data; a drivertransistor using the transistors; and a bit line for access to a memory;wherein said plurality of transistors are six transistors consisting of:a pair of n-channel type of transfer transistors connected each tobetween said first and second storage nodes; a pair of n-channel type ofdriver transistors each with a source node thereof connected to a groundpotential line; and a pair of p-channel type of load transistors eachwith a source node thereof connected to a first power line having anelectric potential higher than the ground potential in said groundpotential line.
 5. The semiconductor memory according to claim 4,wherein, in said static type memory cell, respective gate nodes of thedriver transistor and load transistor are formed along the same straightline, and a contact connected to a well layer of said driver transistoris connected to said gate node disposed between said driver transistorand said load transistor so as to reach said well layer.
 6. Thesemiconductor memory according to claim 4, wherein the gates of saiddriver transistor and transfer transistor have the same design width. 7.The semiconductor memory according to claim 4, wherein, in said statictype memory cell, a voltage corresponding to a high electric potentialof a word line connected to the gate node of said transfer transistor ishigher than that corresponding to a high electric potential of a bitline for access to the memory cell.
 8. The semiconductor memoryaccording to claim 4, wherein, in said static type memory cell, anelectric potential of a first power line connected to the source node ofsaid load transistor is higher than a voltage corresponding to a highelectric potential of the bit line for access to the memory cell.
 9. Thesemiconductor memory according to claim 4, wherein the electricpotential of said first power line is controlled to a level higher thanthe high electric potential state of the bit line while the memorycircuit is being accessed, and to a level equal to the high electricpotential state of the bit line while the memory circuit is not beingaccessed.
 10. The semiconductor memory according to claim 4, wherein, insaid static type memory cell, a voltage corresponding to the highelectric potential state of a word line connected to a gate node of saidtransfer transistor is equal to an electric potential_of a first powerline connected to a source node of said load transistor and is higherthan a voltage corresponding to the high electric potential state of abit line for access to the memory cell.
 11. The semiconductor memoryaccording to claim 4, wherein, in said static type of memory cell, awell layer of said load transistor is connected to a gate node of saidload transistor.
 12. The semiconductor memory according to claim 11,wherein, in said static type memory cell, said load transistor with thegate node connected thereto and the well layer of said load transistorare formed integral with each other.
 13. The semiconductor memoryaccording to claim 12, wherein, in said static type memory cell,respective gates of the driver transistor and the load transistor withsaid gate node connected thereto are formed along the same straightline, and a contact connected to the well formed in the integrated stateis formed under the contact for connecting said gate node to saidmetallic wiring.
 14. The semiconductor memory according to claim 11,wherein, in said static type of memory cell, a voltage corresponding tothe high electric potential state of a word line connected to the gatenode of said transfer transistor is higher than a voltage correspondingto the high electric potential state of a bit line for access to thememory cell.
 15. The semiconductor memory according to claim 4, wherein,in said static type of memory cell, a well layer of said load transistoris connected to a first power line.
 16. The semiconductor memoryaccording to claim 15, wherein, in said static type of memory cell, avoltage corresponding to the high electric potential state of a wordline connected to a gate node of said transfer transistor is equal to anelectric potential of a first power line connected to a source node ofsaid load transistor and is higher than a voltage corresponding to thehigh electric potential state of a bit line for access to the memorycell.
 17. The semiconductor memory according to claim 4, wherein, insaid static type of memory cell, a well layer of said transfertransistor is connected to a word line as a gate node of said transfertransistor.
 18. The semiconductor memory according to claim 17, wherein,in said static type of memory cell, an electric potential of a firstpower line connected to a source node of said load transistor is higherthan a voltage corresponding to the high electric potential state of abit line for access to the memory cell.
 19. The semiconductor memoryaccording to claim 17, wherein, in said static type of memory cell, awell layer of said load transistor is connected to a gate node of saidload transistor.
 20. The semiconductor memory according to claim 19,wherein, in said static type of memory cell, a voltage corresponding tothe high electric potential state of a word line connected to a gatenode of said transfer transistor is equal to an electric potential of afirst power line connected to a source node of said load transistor andis higher than a voltage corresponding to a high electric potential of abit line for access to the memory cell.
 21. The semiconductor memoryaccording to claim 4, wherein, in said static type of memory cell, awell layer of said transfer transistor is connected to a storage nodeconnected to a source node of said transfer transistor.
 22. Thesemiconductor memory according to claim 21, wherein, in said static typeof memory cell, a well layer of said load transistor is connected to agate node of said load transistor.
 23. The semiconductor memoryaccording to claim 21, wherein, in said static type of memory cell, avoltage corresponding to the high electric potential state of a wordline connected to a gate node of said transfer transistor is higher thana voltage corresponding to the high electric potential state of a bitline for access to the memory cell.
 24. The semiconductor memoryaccording to claim 24, wherein, in said static type of memory cell, awell layer of said transfer transistor is connected to a first powerline connected to a source node of said load transistor.
 25. Thesemiconductor memory according to claim 24, wherein, in said static typeof memory cell, a voltage corresponding to a low electric potentialstate of a word line connected to a gate node of said transfertransistor is lower than a ground electric potential of 0 V.
 26. Thesemiconductor memory according to claim 24, wherein, in said static typeof memory cell, a source line SL for said driver transistor is connectedbetween memory cells sharing a common word line; and said source line SLis control to the ground electric potential of 0V in the high electricpotential state of the word line and to a voltage higher than the groundelectric potential in the low electric potential state of said wordline. 27-31. (canceled)
 32. The semiconductor memory according to claim2, wherein a gate node and a well node under a buried oxide film areconnected to a transistor forming a logic circuit mounted together withsaid static type of memory cell on the same semiconductor substrate. 33.The semiconductor memory according to 2, wherein said 6-transistormemory cell and 4-transistor memory sell are formed on the samesubstrate.